High-Performance Solar-Blind p-NiO/n-ZnO/p-Si Ultraviolet Heterojunction Bipolar Phototransistors With High Optical Gain
Author:
Affiliation:
1. Department of Electrophysics, National Chiayi University, Chiayi, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/10183770/10149189.pdf?arnumber=10149189
Reference66 articles.
1. Self-powered p-NiO/n-ZnO heterojunction ultraviolet photodetectors fabricated on plastic substrates
2. High-Performance Deep Ultraviolet Photodetector Based on NiO/β-Ga2O3 Heterojunction
3. UV photo-detector based on p-NiO thin film/n-ZnO nanorods heterojunction prepared by a simple process
4. Preparation of low cost n-ZnO/MgO/p-Si heterojunction photodetector by laser ablation in liquid and spray pyrolysis
5. In Situ Fabrication of PdSe2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio
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