Radiation Defects Created in n ‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1

Radiation Defects Created in n ‐Type 4H‐SiC by Electron Irradiation in the Energy Range of 1–10 MeV

Published:2019-07-24 Issue:17 Volume:216 Page:1900312
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hazdra Pavel¹^ORCID,Vobecký Jan¹²

Affiliation:

1. Department of MicroelectronicsFaculty of Electrical EngineeringCzech Technical University in Prague Technická 2 CZ-166 27 Prague 6 Czech Republic

2. ABB Switzerland Ltd. Semiconductors Fabrikstrasse 3 Lenzburg CH-5600 Switzerland

Funder

Grantová Agentura České Republiky

FP7 Nanosciences, Nanotechnologies, Materials and new Production Technologies

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900312

Reference26 articles.

1. Design and Characterization of Newly Developed 10 kV 2 A SiC p-i-n Diode for Soft-Switching Industrial Power Supply

2. Investigation of point and extended defects in electron irradiated silicon—Dependence on the particle energy

3. Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5MeV and 15MeV

4. NIEL Scaling: Comparison With Measured Defect Introduction Rate in Silicon

5. Cree Inc. CPW3-1700S010 – Silicon Carbide Schottky Diode Chip https://www.wolfspeed.com/power/products/sic-schottky-diodes/cpw3-1700-s010b(accessed: April 2019).

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