Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism-Reference-Cited by-同舟云学术

Comparative Study Between Partially and Fully Recessed‐Gate Enhancement‐Mode AlGaN/GaN MIS HEMT on the Breakdown Mechanism

Published:2019-05-30 Issue:16 Volume:216 Page:1900115
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

He Yunlong¹,Gao Hao¹,Wang Chong¹,Zhao Yaopeng¹,Lu Xiaoli¹,Zhang Chunfu¹,Zheng Xuefeng¹,Guo Lixin²,Ma Xiaohua¹,Hao Yue¹

Affiliation:

1. State Key Discipline Laboratory of Wide Band‐gap Semiconductor TechnologySchool of MicroelectronicsXidian UniversityShaanxi 710071People's Republic of China

2. School of Physics and Optoelectronic EngineeringXidian UniversityShaanxi 710071People's Republic of China

Funder

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900115

Reference30 articles.

1. Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

2. GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

3. 200 V Enhancement-Mode p-GaN HEMTs Fabricated on 200 mm GaN-on-SOI With Trench Isolation for Monolithic Integration

4. Trap states in enhancement-mode double heterostructures AlGaN/GaN high electron mobility transistors with different GaN channel layer thicknesses

5. Enhancement-Mode AlGaN/GaN Nanowire Channel High Electron Mobility Transistor With Fluorine Plasma Treatment by ICP

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