Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2environment-Reference-Cited by-同舟云学术

Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N2environment

Published:2014-02-19 Issue:5 Volume:211 Page:1175-1178
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Deng Zhen¹,Jiang Yang¹,Zuo Peng¹,Fang Yutao¹,Ma Ziguang¹,Jia Haiqiang¹,Zhou Junming¹,Chen Hong¹

Affiliation:

1. Beijing National Laboratory for Condensed Matter Physics; Institute of Physics; Chinese Academy of Sciences; No. 8 3rd South Street Zhongguancun Beijing 100190 P.R. China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Heavy doping effects in Mg-doped GaN

2. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

3. Growth of low resistivity p-type GaN by metal organic chemical vapour deposition

4. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

5. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping

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