Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching-Reference-Cited by-同舟云学术

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Improved performance of GaN-based light emitting diodes with nanopatterned sapphire substrates fabricated by wet chemical etching

Published:2015-05 Issue:3 Volume:33 Page:032402
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Geng Chong,Yan Qingfeng,Dong Peng,Shan Liang,Du Chengxiao,Wei Tongbo,Hao Zhibiao

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4916687

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate;Crystallography Reports;2023-12

2. Fabrication of nano-patterned sapphire substrates by combining nanoimprint lithography with edge effects;CrystEngComm;2019

3. A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD;CrystEngComm;2018

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