Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films-Reference-Cited by-同舟云学术

Schottky barrier diodes based on room temperature fabricated amorphous zinc tin oxide thin films

Published:2017-06-13 Issue:10 Volume:214 Page:1700210
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Schlupp Peter¹,von Wenckstern Holger¹,Grundmann Marius¹

Affiliation:

1. Felix-Bloch-Institut für Festkörperphysik, Fakultät für Physik und Geowissenschaften; Universität Leipzig; Linnéstr. 5, 04103 Leipzig Germany

Funder

ESF

Deutsche Forschungsgemeinschaft

Leipzig School of Natural Science

Universität Leipzig

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference42 articles.

1. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples

2. Amorphous Oxide Semiconductors for High-Performance Flexible Thin-Film Transistors

3. Material characteristics and applications of transparent amorphous oxide semiconductors

4. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

5. Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

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