Properties of Schottky barrier diodes on heteroeptixial α-Ga2O3 thin films
Author:
Affiliation:
1. Felix-Bloch-Institut für Festkörperphysik, Fakultät für Physik und Geowissenschaften, Universität Leipzig , Linnestraße 5, 04103 Leipzig, Germany
Abstract
Funder
GraFOx Leibniz Science Campus
Publisher
American Vacuum Society
Subject
Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics
Link
https://pubs.aip.org/avs/jva/article-pdf/doi/10.1116/6.0002651/18007923/043411_1_6.0002651.pdf
Reference58 articles.
1. Group-III Sesquioxides: Growth, Physical Properties and Devices
2. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS
3. β-Gallium oxide power electronics
4. Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction
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