Modulation of electron barriers between TiN x and oxide insulators (SiO2 , Al2 O3 ) using Ti interlayer-Reference-Cited by-同舟云学术

Modulation of electron barriers between TiN x and oxide insulators (SiO2 , Al2 O3 ) using Ti interlayer

Published:2013-11-29 Issue:2 Volume:211 Page:382-388
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

De Stefano Francesca¹,Afanas'ev Valeri V.¹,Houssa Michel¹,Goux Ludovic²,Opsomer Karl²,Jurczak Małgorzata²,Stesmans Andre¹

Affiliation:

1. Department of Physics and Astronomy; University of Leuven; Celestijnenlaan 200 D 3001 Leuven Belgium

2. IMEC; Kapeldreef 75 3001 Leuven Belgium

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330210/fullpdf

Reference30 articles.

1. High dielectric constant gate oxides for metal oxide Si transistors

2. High-κ gate dielectrics: Current status and materials properties considerations

3. Internal photoemission at interfaces of high-κ insulators with semiconductors and metals

4. Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices

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