MOCVD of tungsten nitride thin films: Comparison of precursor performance and film characteristics-Reference-Cited by-同舟云学术

MOCVD of tungsten nitride thin films: Comparison of precursor performance and film characteristics

Published:2013-11-13 Issue:2 Volume:211 Page:260-266
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Srinivasan Nagendra B.¹,Thiede Tobias B.¹,de los Arcos Teresa²,Rogalla Detlef³,Becker Hans-Werner³,Devi Anjana¹,Fischer Roland A.¹

Affiliation:

1. Inorganic Chemistry II; Ruhr-University Bochum; 44801 Bochum Germany

2. Experimental Physics II; Ruhr-University Bochum; 44801 Bochum Germany

3. Central Unit for Ion Beams and Radionuclides (RUBION); Ruhr-University Bochum; 44801 Bochum Germany

Funder

European Community's Seventh Framework Programme

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201330127/fullpdf

Reference31 articles.

1. Metrology and Characterization Challenges for Emerging Research Materials and Devices

2. Development of tungsten nitride film as barrier layer for copper metallization

3. Diffusion barrier properties of tungsten nitride films grown by atomic layer deposition from bis(tert-butylimido)bis(dimethylamido)tungsten and ammonia

4. Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization

5. Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices

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