Low temperature metal-organic chemical vapor deposition of tungsten nitride as diffusion barrier for copper metallization
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 51 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fluorine-free Plasma Enhanced Atomic Layer Deposited Ultrathin Tungsten Nitride Thin Films for Dual Diffusion Barrier Performance;ACS Applied Nano Materials;2023-11-17
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4. Physical properties of nanostructured ZnO thin films deposited by DC magnetron sputtering method with different volume of O2 in carrier gas;Journal of Mining and Metallurgy, Section B: Metallurgy;2019
5. Synthesis of Mono-Imido Tungsten Complexes Directly from WCl6;ChemistrySelect;2016-01
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