Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

Published:2015-02-01 Issue:5 Volume:212 Page:947-953
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Mandurrino Marco¹,Verzellesi Giovanni²,Goano Michele¹³,Vallone Marco¹,Bertazzi Francesco¹³,Ghione Giovanni¹,Meneghini Matteo⁴,Meneghesso Gaudenzio⁴,Zanoni Enrico⁴

Affiliation:

1. Dipartimento di Elettronica e Telecomunicazioni; Politecnico di Torino; corso Duca degli Abruzzi 24 Torino 10129 Italy

2. Dipartimento di Scienze e Metodi dell'Ingegneria; Università di Modena e Reggio Emilia; via Amendola 2 Reggio Emilia 42122 Italy

3. IEIIT-CNR; Politecnico di Torino; corso Duca degli Abruzzi 24 Torino 10129 Italy

4. Dipartimento di Ingegneria dell'Informazione; Università di Padova; via Gradenigo 6/B Padova 35131 Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201431743/fullpdf

Reference36 articles.

1. Forward-bias tunneling: A limitation to bipolar device scaling

2. High-quality p–n junctions with quaternary AlInGaN/InGaN quantum wells

3. Two channels of non-radiative recombination in InGaN/GaN LEDs

4. The origin of the high ideality factor in AlGaN-based quantum well ultraviolet light emitting diodes

5. Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage

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