Contrary luminescence behaviors of InGaN/GaN light emitting diodes caused by carrier tunneling leakage
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3642955
Reference25 articles.
1. Solid-State Light Sources Getting Smart
2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
3. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm
4. Origin of efficiency droop in GaN-based light-emitting diodes
5. Auger recombination in InGaN measured by photoluminescence
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