Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices-Reference-Cited by-同舟云学术

Low‐Temperature Selective Growth of Heavily Boron‐Doped Germanium Source/Drain Layers for Advanced pMOS Devices

Published:2019-11-11 Issue:3 Volume:217 Page:1900628
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Porret Clement¹^ORCID,Vohra Anurag¹²^ORCID,Nakazaki Nobuya³,Hikavyy Andriy¹,Douhard Bastien¹,Meersschaut Johan¹,Bogdanowicz Janusz¹,Rosseel Erik¹,Pourtois Geoffrey¹,Langer Robert¹,Loo Roger¹

Affiliation:

1. imec vzw Kapeldreef 75 Leuven B-3001 Belgium

2. Institute for Nuclear and Radiation PhysicsK.U. Leuven Celestijnenlaan 200D Leuven B-3001 Belgium

3. Sony Semiconductor Solutions Corporation Asahi-cho 4-14-1, Atsugi-shi Kanagawa 243-0014 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900628

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5. Processing Technologies for Advanced Ge Devices

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1. Advances in In Situ Boron and Phosphorous Doping of SiGeSn;ECS Journal of Solid State Science and Technology;2023-05-31

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3. Low temperature selective growth of Ga-doped and Ga–B co-doped germanium source/drain for PMOS devices;Japanese Journal of Applied Physics;2023-01-31

4. Evolution of the structural and electronic properties, and dynamical fluxionality of B2Gen−/0 (n = 3–12) clusters: emergence of B2 unit endohedral pentagonal structure and aromaticity at n = 10;Molecular Physics;2021-08-13

5. Comprehensive n- and pMOSFET Channel Material Benchmarking and Analysis of CMOS Performance Metrics Considering Quantum Transport and Carrier Scattering Effects;IEEE Journal of the Electron Devices Society;2020