Growth and Characterization of Vertical and Lateral p-n Junctions Formed by Selective-Area p-GaN MOVPE on Patterned Templates-Reference-Cited by-同舟云学术

Growth and Characterization of Vertical and Lateral p-n Junctions Formed by Selective-Area p-GaN MOVPE on Patterned Templates

Published:2018-11-25 Issue:2 Volume:216 Page:1800677
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Debald Arne¹^ORCID,Kotzea Simon¹^ORCID,Heuken Michael¹²,Kalisch Holger¹,Vescan Andrei¹

Affiliation:

1. Compound Semiconductor Technology (CST); RWTH Aachen University; Sommerfeldstr. 18 52074 Aachen Germany

2. M. Heuken; AIXTRON SE; Dornkaulstr. 2 52134 Herzogenrath Germany

Funder

BMBF

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201800677/fullpdf

Reference28 articles.

1. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

2. D. Ji W. Li S. Chowdhury 2016 114

3. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

4. W. Witte 2016

5. Demonstration of GaN Current Aperture Vertical Electron Transistors With Aperture Region Formed by Ion Implantation

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