Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2 O3 /SiN x Gate Insulator-Reference-Cited by-同舟云学术

Outstanding Performance as Cu Top Gate IGZO TFT With Large Trans-Conductance Coefficient by Adopting Double-Layered Al2 O3 /SiN x Gate Insulator

Published:2017-09-28 Issue:12 Volume:214 Page:1700183
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Yujin¹²,Lee Kwang-Heum¹,Mun Geumbi¹,Park Kyeongwoo¹²,Park Sang-Hee Ko¹

Affiliation:

1. Department of Materials Science and Engineering, KAIST; 291 Daehak-ro Yuseong-gu Daejeon 34141 Republic of Korea

2. Display Research Center, Samsung Display; 1 Samsung-ro Yongin-si Gyeonggi-do 17113 Republic of Korea

Funder

National Research Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. 42.1: Invited Paper: Improved Amorphous In-Ga-Zn-O TFTs

2. Review paper: Transparent amorphous oxide semiconductor thin film transistor

3. Channel Length Dependent Bias-Stability of Self-Aligned Coplanar a-IGZO TFTs

4. Present status of amorphous In–Ga–Zn–O thin-film transistors

5. 56.1:Invited Paper: Manufacturing Issues for Oxide TFT Technologies for Large-Sized AMOLED Displays

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