Impact of Cone‐Shape‐Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p‐GaN via MOCVD-Reference-Cited by-同舟云学术

Impact of Cone‐Shape‐Patterned Sapphire Substrate and Temperature on the Epitaxial Growth of p‐GaN via MOCVD

Published:2019-05-10 Issue:14 Volume:216 Page:1900026
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Yao Weizhen¹,Wang Lianshan¹²,Li Fangzheng¹²,Meng Yulin¹²,Yang Shaoyan¹²,Wang Zhanguo¹

Affiliation:

1. Key Laboratory of Semiconductor Materials Scienceand Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of SemiconductorsChinese Academy of SciencesP. O. Box 912Beijing 100083People's Republic of China

2. Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 101408People's Republic of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900026

Reference27 articles.

1. Nearly single-crystalline GaN light-emitting diodes on amorphous glass substrates

2. Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping

3. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD

4. Drift-diffusion and hydrodynamic modeling of current collapse in GaN HEMTs for RF power application

5. P.Srivastava H.Oprins M.Van Hove J.Das P. E.Malinowski B.Bakeroot D.Marcon D.Visalli X.Kang S.Lenci K.Geens J.Viaene K.Cheng M.Leys I.De Wolf S.Decoutere R. P.Mertens G.Borghs 2011 International Electron Devices Meeting (IEEE Washington 2011) pp. 19.6.1–19.6.4.

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