The Effect of Annealing Pressure on Perovskite Films and Its Thin‐Film Field‐Effect Transistors' Performance-Reference-Cited by-同舟云学术

The Effect of Annealing Pressure on Perovskite Films and Its Thin‐Film Field‐Effect Transistors' Performance

Published:2019-09-23 Issue:22 Volume:216 Page:1900434
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhou Zhou¹,Guo Ning¹,Peng Yuze¹,Tang Linlin¹,Zhang Jianjun¹,Cai Hongkun¹,Ni Jian¹,Sun Yanyan²,Li Juan¹^ORCID

Affiliation:

1. Institute of Photo-ElectronicsThe Tianjin Key Laboratory for Optical-Electronic, Thin Film Devices and TechnologyNankai University Tianjin 300071 P. R. China

2. Department of GynecologyTianjin Third Central Hospital of TianJin Tianjin 300170 P. R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900434

Reference37 articles.

1. The light and shade of perovskite solar cells

2. The emergence of perovskite solar cells

3. Highly Reproducible Perovskite Solar Cells with Average Efficiency of 18.3% and Best Efficiency of 19.7% Fabricated via Lewis Base Adduct of Lead(II) Iodide

4. Perovskite as Light Harvester: A Game Changer in Photovoltaics

5. Charging up Stationary Energy Storage

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