Microfluidic Approach for Lead Halide Perovskite Flexible Phototransistors

Abstract

Lead halide perovskites possess outstanding optical characteristics that can be employed in the fabrication of phototransistors. However, due to low current modulation at room temperature, sensitivity to the ambient environment, lack of patterning techniques and low carrier mobility of polycrystalline form, investigation in perovskite phototransistors has been limited to rigid substrates such as silicon and glass to improve the film quality. Here, we report on room temperature current modulation in a methylammonium lead iodide perovskite (MAPbI3) flexible transistor made by an extremely cheap and facile fabrication process. The proposed phototransistor has the top-gate configuration with a lateral drain–channel–source structure. The device performed in the linear and saturation regions both in the dark and under white light in different current ranges according to the illumination conditions. The transistor showed p-type transport characteristics and the field effect mobility of the device was calculated to be ~1.7 cm2 V−1 s−1. This study is expected to contribute to the development of MAPbI3 flexible phototransistors.