A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method-Reference-Cited by-同舟云学术

A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method

Published:2015-06-24 Issue:8 Volume:212 Page:1685-1694
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Puglisi Rosaria A.¹,Caccamo Sebastiano¹,D'Urso Luisa²,Fisichella Gabriele¹,Giannazzo Filippo¹,Italia Markus¹,La Magna Antonino¹

Affiliation:

1. Consiglio Nazionale delle Ricerche; Istituto per la Microelettronica e Microsistemi; Strada Ottava 5, Zona Industriale 95121 Catania Italy

2. Dipartimento di Scienze Chimiche; Università degli Studi di Catania; Viale Andrea Doria 6 95121 Catania Italy

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference37 articles.

1. Industrial Accelerators and Their Applications

2. Ion implantation of semiconductors

3. ION IMPLANTATION IN III–V SEMICONDUCTOR TECHNOLOGY

4. Exploring the Limits of N-Type Ultra-Shallow Junction Formation

5. The P−Si (Phosphorus-Silicon) system

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