n-ZnO/i-InGaN/p-GaN heterostructure for solar cell application-Reference-Cited by-同舟云学术

n-ZnO/i-InGaN/p-GaN heterostructure for solar cell application

Published:2013-07-30 Issue:10 Volume:210 Page:2214-2218
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Nam Seung-Yong¹,Choi Yong-Seok²,Song Young-Ho³,Jung Myoung-Ho⁴⁵,Kang Chang Mo¹,Kong Duk-Jo¹,Park Seong-Ju²⁶,Lee Jeong-Yong⁴⁵,Namkoong Gon⁷,Lee Dong-Seon¹

Affiliation:

1. School of Information and Communication; Gwangju Institute of Science and Technology (GIST); Korea

2. School of Materials Science and Engineering; Gwangju Institute of Science and Technology (GIST); Korea

3. Korean Photonics Technology Institute; Gwangju 500-712 Korea

4. Department of Materials Science and Engineering; KAIST; Daejeon 305-701 Korea

5. Center for Nanomaterials and Chemical Reactions; Institute for Basic Science; Daejeon 305-701 Korea

6. Department of Nanobio Materials and Electronics; Gwangju Institute of Science and Technology (GIST); Korea

7. Department of Electrical and Computer Engineering; Applied Research Center; Old Dominion University; Newport News VA 23606 USA

Funder

National Research Foundation of Korea

Korea government

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201329158/fullpdf

Reference14 articles.

1. High internal and external quantum efficiency InGaN/GaN solar cells

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap

3. Design and characterization of GaN∕InGaN solar cells

4. Effect of III-nitride polarization on V OC in p-i-n and MQW solar cells

5. Investigation on the conversion efficiency of InGaN solar cells fabricated on GaN and ZnO substrates

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