Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors-Reference-Cited by-同舟云学术

Overcoming the poor crystal quality and DC characteristics of AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistors

Published:2016-03-04 Issue:8 Volume:213 Page:2203-2207
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Zhang Weihang¹,Li Xiangdong¹,Zhang Jincheng¹,Jiang Haiqing¹,Xu Xin²,Guo Zhenxing¹,Jiang Renyuan¹,Zou Yu¹,He Yunlong¹,Hao Yue¹

Affiliation:

1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics; Xidian University; No. 2 South Taibai Road Xi'an 710071 P.R. China

2. Information Systèmes et Technologie (EEA); Université Paris-Sud; 15 rue Georges Clemenceau 91405 Orsay Cedex France

Funder

National Science and Technology Major Project of China

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference26 articles.

1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

2. 30-W/mm GaN HEMTs by Field Plate Optimization

3. Punch-through in short-channel AlGaN/GaN HFETs

4. High-temperature performance of AlGaN/GaN HFETs on SiC substrates

5. Enhanced effect of polarization on electron transport properties in AlGaN/GaN double-heterostructure field-effect transistors

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