The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R ON characteristics of AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

The influence of Al composition in AlGaN back barrier layer on leakage current and dynamic R ON characteristics of AlGaN/GaN HEMTs

Published:2017-06-06 Issue:8 Volume:214 Page:1600824
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

He Liang¹,Li Liuan¹,Zheng Yue¹,Yang Fan¹,Shen Zhen¹,Chen Zijun¹,Wang Wenjing¹,Zhang Jialin¹,Zhang Xiaorong¹,He Lei¹,Wu Zhisheng¹²,Zhang Baijun¹²,Liu Yang¹²³

Affiliation:

1. School of Electronics and Information Technology; Sun Yat-Sen University; 510275 Guangzhou P.R. China

2. State Key Laboratory of Optoelectronic Materials and Technologies; Sun Yat-Sen University; 510275 Guangzhou P.R. China

3. Institute of Power Electronics and Control Technology; Sun Yat-Sen University; 510275 Guangzhou P.R. China

Funder

National Natural Science Foundation of China

National Key Research and Development Program

Guangdong Science and Technology Department

Natural Science Foundation of Guangdong Province

International Sci. & Tech. Collaboration Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Kilovolt AlGaN/GaN HEMTs as Switching Devices

2. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

3. GaN on Si Technologies for Power Switching Devices

4. Uniform Growth of AlGaN/GaN High Electron Mobility Transistors on 200 mm Silicon (111) Substrate

5. An Experimental Demonstration of GaN CMOS Technology

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