Neutral beam etching for device isolation in AlGaN/GaN HEMTs-Reference-Cited by-同舟云学术

Neutral beam etching for device isolation in AlGaN/GaN HEMTs

Published:2016-11-21 Issue:3 Volume:214 Page:1600617
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Hemmi Fuyumi¹,Thomas Cedric²,Lai Yi-Chun³,Higo Akio³,Guo Alex⁴,Warnock Shireen⁴,del Alamo Jesús A.⁴,Samukawa Seiji²³,Otsuji Taiichi¹,Suemitsu Tetsuya¹

Affiliation:

1. Research Institute of Electrical Communication; Tohoku University; 2-1-1 Katahira Aoba-ku 980-8577 Sendai Japan

2. Institute of Fluid Science; Tohoku University; 2-1-1 Katahira Aoba-ku 980-8577 Sendai Japan

3. Advanced Institute of Materials Research; Tohoku University; 2-1-1 Katahira Aoba-ku 980-8577 Sendai Japan

4. Microsystems Technology Laboratories; Massachusetts Institute of Technology; 77 Massachusetts Avenue Cambridge MA 02139 USA

Funder

JSPS KAKENHI

Tohoku University-MIT

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

2. InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier andfT/fmaxof 260/220 GHz

3. Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack

4. A new process approach for slant field plates in GaN-based high-electron-mobility transistors

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation;Applied Physics Letters;2022-07-04

2. Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling;IEEE Transactions on Electron Devices;2021-04

3. On the energy band of neutral-beam etched Si/Si0.7Ge0.3 nanopillars;Japanese Journal of Applied Physics;2021-02-10

4. Mapping of damage induced by neutral beam etching on GaN surfaces using scanning internal photoemission microscopy;Japanese Journal of Applied Physics;2019-05-20

5. Atomic layer etching of AlGaN using Cl2 and Ar gas chemistry and UV damage evaluation;Journal of Vacuum Science & Technology A;2019-03