Suppression of boron incorporation at the early growth phases of boron-doped diamond thin films-Reference-Cited by-同舟云学术

Suppression of boron incorporation at the early growth phases of boron-doped diamond thin films

Published:2015-07-22 Issue:11 Volume:212 Page:2595-2599
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Tsigkourakos Menelaos¹²,Hantschel Thomas¹,Xu Zheng¹²,Douhard Bastien¹,Meersschaut Johan¹,Zou Yiming³,Larsson Karin³,Boman Mats³,Vandervorst Wilfried¹²

Affiliation:

1. imec; Kapeldreef 75 3001 Leuven Belgium

2. Department of Physics and Astronomy; KU Leuven; Celestijnenlaan 200D 3001 Leuven Belgium

3. Department of Chemistry-Angstrom Laboratory; Uppsala University; Lägerhyddsvägen 1 751 21 Uppsala Sweden

Funder

IMEC's Industrial Affiliation Program

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532185/fullpdf

Reference15 articles.

1. A comprehensive model for the electrical nanocontact on germanium for scanning spreading resistance microscopy applications

2. On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films

3. Initial growth stages of heavily boron-doped HFCVD diamond for electrical probe application

4. Studies on Glass. IX. The Electrical Conductivity of Boron Trioxide–Sodium Borate Glasses.

5. Effect of oxygen addition on boron incorporation on semiconductive diamond CVD

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