Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Study of GaP Nucleation Layers Grown on Si by Plasma‐Enhanced Atomic Layer Deposition

Published:2019-12-03 Issue:4 Volume:217 Page:1900532
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Gudovskikh Alexander S.¹²^ORCID,Uvarov Alexander. V.¹,Morozov Ivan A.¹,Bukatin Anton S.¹,Baranov Artem I.¹,Kudryashov Dmitry A.¹,Kalyuzhnyy Nikolay A.³,Mintairov Sergey A.³,Zubkov Vasily I.²^ORCID,Yakovlev George E.²^ORCID,Kleider Jean-Paul⁴

Affiliation:

1. Renewable Energy LaboratorySt. Petersburg National Research Academic University RAS St. Petersburg 194091 Russia

2. Saint-Petersburg Electrotechnical University “LETI” St. Petersburg 197376 Russia

3. Photovoltaics LaboratoryIoffe Institute St. Petersburg 194021 Russia

4. GeePs, Group of electrical engineering – Paris, CNRS, CentraleSupélecUniv. Paris-Sud, Université Paris-SaclaySorbonne Université Gif-sur-Yvette Cedex 91192 France

Funder

Russian Science Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900532

Reference23 articles.

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2. E.García-Tabares I.Garcia I.Rey‐Stolle C.Algora D.Martín inProc. 8th Spanish Conf. Electron Devices CDE'2011 IEEE New Jersey2011.

3. GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

4. III N V semiconductors for solar photovoltaic applications

5. Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

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