Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth-Reference-Cited by-同舟云学术

Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

Published:2015-11-10 Issue:5 Volume:24 Page:634-644
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

García‐Tabarés Elisa¹,Carlin John A.²,Grassman Tyler J.³,Martín Diego⁴,Rey‐Stolle Ignacio¹,Ringel Steven A.²³

Affiliation:

1. Instituto de Energía Solar Universidad Politécnica de Madrid, ETSI Telecomunicación Madrid Spain

2. Institute for Materials Research The Ohio State University Columbus OH USA

3. Department of Electrical & Computer Engineering The Ohio State University Columbus OH USA

4. Área de Tecnología Electrónica Universidad Rey Juan Carlos Móstoles Madrid 28933 Spain

Funder

Universidad Politécnica de Madrid

U.S. Department of Energy

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pip.2703

Reference45 articles.

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4. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers

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