The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure-Reference-Cited by-同舟云学术

The Influence of AlN Nucleation Layer on Radio Frequency Transmission Loss of AlN‐on‐Si Heterostructure

Published:2020-02-10 Issue:7 Volume:217 Page:1900755
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chang Shane¹^ORCID,Zhao Ming²,Spampinato Valentina²,Franquet Alexis²,Do Thi-Hien¹,Uedono Akira³,Luong Tien Tung¹,Wang Tsang-Hsuan⁴,Chang Li¹

Affiliation:

1. Department of Materials Science and EngineeringNational Chiao Tung University University Rd. 1001 Hsinchu 30010 Taiwan

2. IMEC Kapeldreef 75 Leuven B-3001 Belgium

3. Division of Applied PhysicsFaculty of Pure and Applied ScienceUniversity of Tsukuba Tsukuba Ibaraki 305-8573 Japan

4. Department of Electrical EngineeringKatholieke Universiteit Leuven Kasteelpark 10 B-3001 Leuven Belgium

Funder

National Chiao Tung University

Hercules Foundation

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900755

Reference35 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE

3. 12.88 W/mm GaN High Electron Mobility Transistor on Silicon Substrate for High Voltage Operation

4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs

5. Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

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3. Contribution of Substrate Harmonic Distortion to GaN-on-Si RF Switches Linearity;IEEE Microwave and Wireless Technology Letters;2024-03

4. Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates;IEEE Journal of the Electron Devices Society;2024

5. More than 60% RF loss reduction and improved crystal quality of GaN-on-Si achieved by in-situ doping tert-butylphosphorus;Journal of Crystal Growth;2024-01