Characteristics of N2and O2Plasma-Induced Damages on AlGaN Thin Film Surfaces-Reference-Cited by-同舟云学术

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Characteristics of N2and O2Plasma-Induced Damages on AlGaN Thin Film Surfaces

Published:2017-09-05 Issue:11 Volume:214 Page:1700393
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kawakami Retsuo¹,Niibe Masahito²,Nakano Yoshitaka³,Tanaka Ryo²,Azuma Chisato¹,Mukai Takashi⁴

Affiliation:

1. Graduate School of Technology, Industrial and Social Sciences, Tokushima University; Tokushima 770-8506 Japan

2. Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori; Hyogo 678-1205 Japan

3. Chubu University, Kasugai; Aichi 487-8501 Japan

4. Nichia Corporation, Anan; Tokushima 774-0044 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

2. Gate leakage currents induced by thermal fluctuation on two-dimensional electron gas in AlGaN/GaN high-electron-mobility transistors

3. Efficient heat dissipation in AlGaN/GaN heterostructure grown on silver substrate

4. Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate

5. High temperature storage test and its effect on the thermal stability and electrical characteristics of AlGaN/GaN high electron mobility transistors

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