Determination of Current Leakage Sites in Diamond p–n Junction-Reference-Cited by-同舟云学术

Determination of Current Leakage Sites in Diamond p–n Junction

Published:2019-08-15 Issue:21 Volume:216 Page:1900243
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Murooka Takuya¹^ORCID,Umezawa Hitoshi²³⁴,Makino Toshiharu⁵,Ogura Masahiko⁵,Kato Hiromitsu⁵,Yamasaki Satoshi⁵,Iwasaki Takayuki¹,Pernot Julien³⁴,Hatano Mutsuko¹

Affiliation:

1. Department of Electrical and Electronic EngineeringTokyo Institute of Technology 2-12-1-NE-18, Ookayama Meguro Tokyo 152-8552 Japan

2. Advanced Power Electronics Research CenterNational Institute of Advanced Industrial Science and Technology (AIST) 1-8-31, Midorigaoka Ikeda Osaka 563-8577 Japan

3. Institut NeelUniversite Grenoble Alpes 25 rue des Martyrs Grenoble 38042 France

4. Institut NeelCNRS 25 rue des Martyrs Grenoble 38042 France

5. Advanced Power Electronics Research CenterNational Institute of Advanced Industrial Science and Technology (AIST) 1-1-1, Umezono Tsukuba Ibaraki 305-8568 Japan

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900243

Reference37 articles.

1. High temperature application of diamond power device

2. Diamond Schottky-pn diode with high forward current density and fast switching operation

3. Electrical characterization of diamond PiN diodes for high voltage applications

4. High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity

5. Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

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