A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing-Reference-Cited by-同舟云学术

A comparative analysis of different measurement techniques to monitor metal and organic contamination in silicon device processing

Published:2015-02-25 Issue:3 Volume:212 Page:495-505
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Polignano M. L.¹,Codegoni D.¹,Grasso S.¹,Mica I.¹,Borionetti G.²,Nutsch A.³

Affiliation:

1. ST Microelectronics; via Olivetti, 2 20864 Agrate Brianza MB Italy

2. MEMC Electronic Materials SpA; A Sunedison Company; Viale Gherzi 31 28100 Novara Italy

3. Physikalisch-Technische Bundesanstalt; Abbestr. 2-12 10587 Berlin Germany

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201400082/fullpdf

Reference47 articles.

1. Diagnostic and monitoring tools of large scale Si-manufacturing: trace-analytical tools and techniques in Si-wafer manufacturing

2. Iron and its complexes in silicon

3. Iron contamination in silicon technology

4. Electrical properties and recombination activity of copper, nickel and cobalt in silicon

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