Electrical Contact Formation in Micro Four‐Point Probe Measurements-Reference-Cited by-同舟云学术

Electrical Contact Formation in Micro Four‐Point Probe Measurements

Published:2019-11-12 Issue:5 Volume:217 Page:1900579
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Folkersma Steven¹²^ORCID,Bogdanowicz Janusz¹^ORCID,Petersen Dirch H.³^ORCID,Hansen Ole⁴^ORCID,Henrichsen Henrik H.⁵,Nielsen Peter F.⁵,Shiv Lior⁵^ORCID,Vandervorst Wilfried¹²^ORCID

Affiliation:

1. IMEC Kapeldreef 75 B-3000 Leuven Belgium

2. Instituut voor Kern en StralingsfysikaKU Leuven Celestijnenlaan 200D B-3001 Leuven Belgium

3. Department of PhysicsTechnical University of Denmark Fysikvej, Bld. 307 DK-2800 Kgs. Lyngby Denmark

4. National Centre for Nano Fabrication and CharacterizationDTU NanolabTechnical University of Denmark DK-2800 Kgs. Lyngby Denmark

5. CAPRES A/SScion-DTU Building 373 DK-2800 Kgs. Lyngby Denmark

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201900579

Reference16 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2. Dopant, composition and carrier profiling for 3D structures

3. Width-Dependent Sheet Resistance of Nanometer-Wide Si Fins as Measured with Micro Four-Point Probe

4. Electrical characterization of single nanometer-wide Si fins in dense arrays

5. D. H.Petersen Ph.D. Thesis Danish Technical University 2009.

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