Light extraction improvement by forming volcanic crater on N-polar GaN emitting surface-Reference-Cited by-同舟云学术

Light extraction improvement by forming volcanic crater on N-polar GaN emitting surface

Published:2012-01-27 Issue:5 Volume:209 Page:998-1001
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Chang You-Hsien,Yang Chun-Ting,Liu Cheng-Yi

Funder

National Central University's Plan to Develop First-class Universities

Top-level Research Centers Grants

National Science Council Grant

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201127581/fullpdf

Reference7 articles.

1. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

2. High performance thin-film flip-chip InGaN–GaN light-emitting diodes

3. Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

4. Fabrication of Pyramidal Patterned Sapphire Substrates for High-Efficiency InGaN-Based Light Emitting Diodes

5. GaN nanotip pyramids formed by anisotropic etching

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