Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface-Reference-Cited by-同舟云学术

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Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface

Published:2016-04 Issue: Volume:45 Page:69-75
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Lin Tseng-Hsing,Wang Shui-Jinn,Tu Yung-Chun,Hung Chien-Hsiung,Yu Tsung-Hsien

Funder

MOST

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference22 articles.

1. High performance thin-film flip-chip InGaN–GaN light-emitting diodes

2. Further Enhancement of Nitride-Based Near-Ultraviolet Vertical-Injection Light-Emitting Diodes by Adopting a Roughened Mesh-Surface

3. Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires

4. Light extraction improvement by forming volcanic crater on N-polar GaN emitting surface

5. Light extraction enhancement of bulk GaN light-emitting diode with hemisphere-cones-hybrid surface

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1. Study on the kinetics of standalone Si micro-pyramid formation using tetra methyl ammonium hydroxide as etchant;Materials Science in Semiconductor Processing;2023-05

2. Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure;Micromachines;2021-09-04

3. Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes;Materials;2021-04-25

4. Emission-intensity-enhanced GaN-based LED based on multilayer grating structures;Optica Applicata;2021

5. Performance-enhanced vertical LED using laser irradiation treatment to control wafer-level n-GaN protrusion arrays;Materials Science in Semiconductor Processing;2020-09

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