Improving Performance of Algan-Based Deep-Ultraviolet Light-Emitting Diodes by Inserting a Higher Al-Content Algan Layer Within the Multiple Quantum Wells-Reference-Cited by-同舟云学术

Improving Performance of Algan-Based Deep-Ultraviolet Light-Emitting Diodes by Inserting a Higher Al-Content Algan Layer Within the Multiple Quantum Wells

Published:2017-09-13 Issue:11 Volume:214 Page:1700461
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Lu Lin¹²,Wan Zhi¹²,Xu Fu Jun³,Shen Bo³,Lv Chen¹²,Jiang Ming¹²,Chen Qi Gong¹²

Affiliation:

1. Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University; Wuhu 241000 P.R. China

2. College of Electrical Engineering, Anhui Polytechnic University; Wuhu 241000 P.R. China

3. Research Center for Wide Gap Semiconductor, School of Physics, Peking University; Beijing 100871 P.R. China

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

2. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

3. Ultraviolet light-emitting diodes based on group three nitrides

4. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

5. Development of high efficiency 255-355 nm AlGaN-based light-emitting diodes

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