The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode-Reference-Cited by-同舟云学术

The enhancement of the output characteristics in the GaN based multiple-channel planar Gunn diode

Published:2015-12-07 Issue:5 Volume:213 Page:1252-1258
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Wang Ying¹,Yang Lin-An¹,Wang Zhi-Zhe¹,Ao Jin-Ping²,Hao Yue¹

Affiliation:

1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics; Xidian University; Xi'an 710071 P. R. China

2. Institute of Technology and Science; Tokushima University; 2-1 Minami-Josanjima Tokushima 770-8506 Japan

Funder

National Natural Science Foundation of China

Key Program of National Natural Science Foundation of China

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532703/fullpdf

Reference27 articles.

1. A Planar Gunn Diode Operating Above 100 GHz

2. Gunn oscillations in planar heterostructure diodes

3. Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

4. Terahertz oscillations in an In0.53Ga0.47As submicron planar Gunn diode

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4. Reliable GaN-Based THz Gunn Diodes With Side-Contact and Field-Plate Technologies;IEEE Access;2020