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Gunn oscillations in planar heterostructure diodes

Published:2008-05-16 Issue:7 Volume:23 Page:075013
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Pilgrim N J,Khalid A,Dunn G M,Cumming D R S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Where optics meets electronics: recent progress in decreasing the terahertz gap

2. Terahertz technology

3. A source of fresh hope

4. Double transit region Gunn diodes

5. D-band InP Gunn devices with second-harmonic power extraction up to 290 GHz

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode;Applied Sciences;2020-08-20

2. Investigation of High-Frequency Fine Structure in the Current Output of Shaped Contact Planar Gunn Diodes;IEEE Transactions on Electron Devices;2020-05

3. Physical-Based Simulation of the GaN-Based Grooved-Anode Planar Gunn Diode;Micromachines;2020-01-16

4. Investigation of Contact Edge Effects in the Channel of Planar Gunn Diodes;IEEE Transactions on Electron Devices;2020-01

5. Thermal Analysis of AlGaN/GaN Hetero-Structural Gunn Diodes on Different Substrates Through Numerical Simulation;IEEE Journal of the Electron Devices Society;2020

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