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Design, fabrication and characterization of In0.23Ga0.77As-channel planar Gunn diodes for millimeter wave applications

  • Published:2011-10 Issue:1 Volume:64 Page:67-72
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Li Chong,Khalid Ata,Paluchowski Caldwell Sonia H.,Holland Martin C.,Dunn Geoff M.,Thayne Iain G.,Cumming David R.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. Kemp MC. Millimetre wave and terahertz technology for the detection of concealed threats – a review. In: Proc of SPIE, vol. 6402; 2006. p. 64020D.

2. Overview of millimeter and terahertz wave application research;Kukutsu;NTT Tech Rev,2009

3. Terahertz technology;Siegel;IEEE Trans Microw Theory Tech,2002

4. High frequency investigation of graded gap injectors for GaAs Gunn diodes;Montanari;Solid State Electron,2005

5. 480GHz oscillator with an InP Gunn device;Eisele;IET Electron Lett,2010

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1. InGaAs-based Gunn light emitting diode;Materials Science in Semiconductor Processing;2023-06

2. Terahertz Electronic Devices;Springer Handbook of Semiconductor Devices;2022-11-11

3. Virtual Simulator;International Journal of Advanced Research in Science, Communication and Technology;2022-03-27

4. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes;Semiconductor Science and Technology;2020-09-24

5. Study on Self-Parallel GaN-Based Terahertz Hetero-Structural Gunn Diode;Applied Sciences;2020-08-20
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