Successful Fabrication of GaN Epitaxial Layer on Non-Catalytically-grown Graphene-Reference-Cited by-同舟云学术

Successful Fabrication of GaN Epitaxial Layer on Non-Catalytically-grown Graphene

Published:2016-06-23 Issue:7 Volume:37 Page:1004-1009
ISSN:1229-5949
Container-title:Bulletin of the Korean Chemical Society
language:en
Short-container-title:Bull. Korean Chem. Soc.

Author:

Hwang Sung Won¹,Choi Suk-Ho²

Affiliation:

1. Department of Nano Science & Mechatronics Engineering, Interdisciplinary Research Center for Health and Nanotechnology Research Center; Konkuk University; Chungju-si 27478 Korea

2. Department of Applied Physics and Institute of Natural Sciences; Kyung Hee University; Yongin 446-701 Korea

Funder

Korean Chemical Society

Publisher

Wiley

Subject

General Chemistry

Reference28 articles.

1. High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

2. Optical properties of two‐dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors

3. Nitride-based semiconductors for blue and green light-emitting devices

4. Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition

5. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

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1. High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene;ACS Applied Materials & Interfaces;2021-06-28

2. Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition;Acta Metallurgica Sinica (English Letters);2019-07-25

3. Strain Effects in Gallium Nitride Adsorption on Defective and Doped Graphene: First-Principles Calculations;Crystals;2018-01-26

4. Strain engineering of atomic and electronic structures of few-monolayer-thick GaN;Physical Review Materials;2017-07-17