High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene-Reference-Cited by-同舟云学术

High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

Published:2021-06-28 Issue:27 Volume:13 Page:32442-32449
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Jia Yanqing¹²,Ning Jing¹²^ORCID,Zhang Jincheng¹²^ORCID,Wang Boyu¹²,Yan Chaochao¹²^ORCID,Zeng Yu¹²,Wu Haidi¹²,Zhang Yachao¹²,Shen Xue¹²,Zhang Chi¹²,Guo Haibin¹²,Wang Dong¹²,Hao Yue¹²

Affiliation:

1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, 710071 Shaanxi, PR China

2. Shaanxi Joint Key Laboratory of Graphene, Xidian University, 710071 Shaanxi, PR China

Funder

Ministry of Science and Technology of the People's Republic of China

Natural Science Basic Research Plan in Shaanxi Province of China

Young Talent fund of University Association for Science and Technology in Shaanxi

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.1c04659

Reference27 articles.

1. Polarity governs atomic interaction through two-dimensional materials

2. Successful Fabrication of GaN Epitaxial Layer on Non-Catalytically-grown Graphene

3. Large-scale patterned multi-layer graphene films as transparent conducting electrodes for GaN light-emitting diodes

4. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

5. Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

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