The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor-Reference-Cited by-同舟云学术

The Effect of Metal Contact Doping on the Scaled Graphene Field Effect Transistor

Published:2021-09-24 Issue: Volume: Page:2100935
ISSN:1438-1656
Container-title:Advanced Engineering Materials
language:en
Short-container-title:Adv Eng Mater

Author:

Peng Songang¹²,Jin Zhi¹^ORCID,Zhang Dayong¹²,Shi Jingyuan¹,Niu Jiebin²,Zhu Chaoyi¹,Zhang Yanhui³,Yu Guanghui³

Affiliation:

1. High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronic Chinese Academy of Sciences Beijing 100029 China

2. Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronic Chinese Academy of Sciences Beijing 100029 China

3. State Key Laboratory of Functional Material for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

Funder

Youth Innovation Promotion Association of Chinese Academy of Sciences

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adem.202100935

Reference48 articles.

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3. Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors