Surface Ohmic Conductivity on a Mott Insulator Based on a One‐dimensional Bromide‐bridged Nickel(III) Complex
Author:
Affiliation:
1. Department of Chemistry Graduate School of Science Tohoku University 6-3 Aramaki-Aza-Aoba, Aoba-Ku Sendai 980-8578 Japan
2. School of Materials Science and Engineering Nankai University Tianjin 300350 P. R. China
Funder
Higher Education Discipline Innovation Project
Publisher
Wiley
Subject
General Chemistry,Biochemistry,Organic Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/asia.202100637
Reference35 articles.
1. A critical review of ohmic and rectifying contacts for silicon carbide
2. Fabrication and performance of GaN electronic devices
3. Mechanisms of current flow in metal-semiconductor ohmic contacts
4. Ohmic-Contact Technology for GaN-Based Light-Emitting Diodes: Role of P-Type Contact
5. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions
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