Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact-Reference-Cited by-同舟云学术

Minimizing the Programming Power of Phase Change Memory by Using Graphene Nanoribbon Edge‐Contact

Published:2022-07-18 Issue:25 Volume:9 Page:2202222
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Wang Xiujun¹²³,Song Sannian¹²,Wang Haomin¹²³^ORCID,Guo Tianqi¹,Xue Yuan¹²,Wang Ruobing¹²,Wang HuiShan¹²³,Chen Lingxiu¹³,Jiang Chengxin¹³⁴,Chen Chen¹²³,Shi Zhiyuan¹³,Wu Tianru¹²³,Song Wenxiong¹²,Zhang Sifan¹,Watanabe Kenji⁵,Taniguchi Takashi⁶,Song Zhitang¹²,Xie Xiaoming¹²³⁴

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences 865 Changning Road Shanghai 200050 P. R. China

2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

3. CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 P. R. China

4. School of Physical Science and Technology ShanghaiTech University Shanghai 201210 P. R. China

5. Research Center for Functional Materials National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

6. International Center for Materials Nanoarchitectonics National Institute for Materials Science 1‐1 Namiki Tsukuba 305‐0044 Japan

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

China Postdoctoral Science Foundation

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202202222

Reference42 articles.

1. Designing crystallization in phase-change materials for universal memory and neuro-inspired computing

2. Phase Change Memory

3. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

4. Breaking the Speed Limits of Phase-Change Memory

5. Phase-change heterostructure enables ultralow noise and drift for memory operation

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