Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%-Reference-Cited by-同舟云学术

Facilely Achieved Self‐Biased Black Silicon Heterojunction Photodiode with Broadband Quantum Efficiency Approaching 100%

Published:2022-10-17 Issue:33 Volume:9 Page:2203234
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Advanced Science

Author:

Zhang Yibo¹^ORCID,Loh Joel Y. Y.¹,Kherani Nazir P.¹²^ORCID

Affiliation:

1. The Edward S. Rogers Sr. Department of Electrical and Computer Engineering University of Toronto 10 King's College Road Toronto Ontario M5S 3G4 Canada

2. Department of Materials Science and Engineering University of Toronto 184 College Street Toronto Ontario M5S 3E4 Canada

Funder

Natural Sciences and Engineering Research Council of Canada

University of Toronto

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202203234

Reference54 articles.

1. Interface Engineering Ti 3 C 2 MXene/Silicon Self‐Powered Photodetectors with High Responsivity and Detectivity for Weak Light Applications

2. Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge-Carrier Engineering

3. High Responsivity and Quantum Efficiency of Graphene/Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

4. A Broadband Photoelectronic Detector in a Silicon Nanopillar Array with High Detectivity Enhanced by a Monolayer Graphene

5. Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors

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