Electronic and optical properties of La-aluminate dielectric thin films on Si (100)-Reference-Cited by-同舟云学术

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Electronic and optical properties of La-aluminate dielectric thin films on Si (100)

Published:2010-07-20 Issue:10-11 Volume:42 Page:1566-1569
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Tahir Dahlang,Choi Eun Hye,Cho Young Joon,Oh Suhk Kun,Kang Hee Jae,Jin Hua,Heo Sung,Chung Jae Gwan,Lee Jae Cheol,Tougaard Sven

Funder

Korea Research Foundation

Korean Government

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/sia.3590/fullpdf

Reference23 articles.

1. Band gap engineering for La aluminate dielectrics on Si (100)

2. Electronic properties of ultrathin (HfO2)x(SiO2)1−x dielectrics on Si (100)

3. Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

4. Degradation mechanisms of electron mobility in metal-oxide-semiconductor field-effect transistors with LaAlO3 gate dielectric

5. Investigation of stability of the effective work function on LaAlO3 and La2Hf2O7

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