Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)-Reference-Cited by-同舟云学术

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Band alignment of atomic layer deposited (ZrO2)x(SiO2)1−x gate dielectrics on Si (100)

Published:2009-05-25 Issue:21 Volume:94 Page:212902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tahir Dahlang,Lee Eun Kyoung,Oh Suhk Kun,Tham Tran Thi,Kang Hee Jae,Jin Hua,Heo Sung,Park Ju Chul,Chung Jae Gwan,Lee Jae Cheol

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3143223

Reference15 articles.

1. High dielectric constant oxides

2. Atomic and electronic structure of amorphous and crystalline hafnium oxide: X-ray photoelectron spectroscopy and density functional calculations

3. Electronic properties of the Zr–ZrO2–SiO2–Si(100) gate stack structure

4. First-principles exploration of alternative gate dielectrics: Electronic structure ofZrO2/SiandZrSiO4/Siinterfaces

5. Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using Zr$\hbox{O}_{\bm 2}$ or Hf $\hbox{O}_{\bm 2}$

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