Enhanced diffusion of phosphorus at grain boundaries in multicrystalline silicon-Reference-Cited by-同舟云学术

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Enhanced diffusion of phosphorus at grain boundaries in multicrystalline silicon

Published:1994 Issue:8 Volume:29 Page:1123-1129
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Schimpf K.,Palm J.,Alexander H.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference8 articles.

1. Dopant segregation in polycrystalline silicon

2. : Springer Proceedings in Physics, Vol. 54 (1991) 166

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impurity Gettering by Boron‐ and Phosphorus‐Doped Polysilicon Passivating Contacts for High‐Efficiency Multicrystalline Silicon Solar Cells;physica status solidi (a);2019-07-17

2. Detecting Dopant Diffusion Enhancement at Grain Boundaries in Multicrystalline Silicon Wafers With Microphotoluminescence Spectroscopy;IEEE Journal of Photovoltaics;2017-03

3. Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects;Progress in Photovoltaics: Research and Applications;2012-06-02

4. The influence of structural defects on phosphorus diffusion in multicrystalline silicon;Solar Energy Materials and Solar Cells;2006-11

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