Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects-Reference-Cited by-同舟云学术

Avalanche breakdown in multicrystalline solar cells due to preferred phosphorous diffusion at extended defects

Published:2012-06-02 Issue:7 Volume:21 Page:1444-1453
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Bauer Jan¹,Lausch Dominik²,Blumtritt Horst¹,Zakharov Nikolai¹,Breitenstein Otwin¹

Affiliation:

1. Max Planck Institute of Microstructure Physics; Halle Germany

2. Fraunhofer Center for Silicon Photovoltaics CSP; Halle Germany

Funder

German Federal Ministry for the Environment

Nature Conservation and Nuclear Safety

SolarWinS

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pip.2220/fullpdf

Reference29 articles.

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2. Avalanche effects in silicon p-n junctions. II. Structurally perfect junctions;Goetzberger;Journal of Applied Physics,1963

3. Hot spots in multicrystalline silicon solar cells: avalanche breakdown due to etch pits;Bauer;Physica Status Solidi Rapid Research Letters,2009

4. Understanding junction breakdown in multicrystalline solar cells;Breitenstein;Journal of Applied Physics,2011

5. Correlation of pre-breakdown sites and bulk defects in multicrystalline silicon solar cells;Lausch;Physica Status Solidi Rapid Research Letters,2009

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