Thermal cycling, DLTS, and PEC studies on LEC gallium arsenide

Author:

Santhanaraghavan P.,Sankaranarayanan K.,Arokiaraj J.,Anbukumar S.,Kumar J.,Ramasamy P.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference11 articles.

1. A deep level transient spectroscopy analysis of electron and hole traps in bulk‐grown GaAs

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3. : Proc. of 10th IEEE Photovoltaic Specialists Conference, Scottsdale, AZ, 1975, p. 44

4. Dislocation-free silicon-doped gallium arsenide grown by LEC procedure

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3. Liquid Encapsulated Czochralski Growth of Large size Gallium Arsenide and Indium Phosphide Single Crystals and their Characterisation—A Review;IETE Journal of Research;1997-03

4. On the enhancement of effective barrier height in Schottky barrier diodes;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12

5. Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs〈100〉;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

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