Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. The Incorporation of Phosphorus in Silicon Epitaxial Layer Growth
2. : Electrochem. Soc. Fall Meeting (1979), Los Angeles
3. Total pressure dependence of doping element incorporation during the chemical vapour deposition of epitaxial silicon
4. On the adsorption- and equilibrium-referred interpretation of the doping element incorporation during the growth of CVD epitaxial silicon
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3. The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VIII);Crystal Research and Technology;1989-03
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