On the adsorption- and equilibrium-referred interpretation of the doping element incorporation during the growth of CVD epitaxial silicon
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference10 articles.
1. Doping in chemically vapour deposited epitaxial silicon
2. The Incorporation of Phosphorus in Silicon Epitaxial Layer Growth
3. Kinetics of the Incorporation of Dopants into Epitaxial CVD Silicon
4. Incorporation of dopants into epitaxial CVD-Silicon layers and incorporation equilibrium
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Plasma‐enhanced chemical vapor deposition ofinsitudoped epitaxial silicon at low temperatures. I. Arsenic doping;Journal of Applied Physics;1989-02
2. The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VII);Crystal Research and Technology;1989-01
3. Decomposition equilibrium of arsine and low pressure doping of epitaxial CVD silicon;Crystal Research and Technology;1985-12
4. Doping of epitaxial CVD silicon with arsenic or phosphorus (II). Non-steady state conditions;Crystal Research and Technology;1985-06
5. Doping of epitaxial CVD silicon with arsenic or phosphorus (i). Steady state conditions;Crystal Research and Technology;1985-04
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